A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020‏ - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Semiconductor quantum dots for memories and neuromorphic computing systems

Z Lv, Y Wang, J Chen, J Wang, Y Zhou… - Chemical reviews, 2020‏ - ACS Publications
The continued growth in the demand of data storage and processing has spurred the
development of high-performance storage technologies and brain-inspired neuromorphic …

Functional materials for memristor‐based reservoir computing: Dynamics and applications

G Zhang, J Qin, Y Zhang, G Gong… - Advanced Functional …, 2023‏ - Wiley Online Library
The booming development of artificial intelligence (AI) requires faster physical processing
units as well as more efficient algorithms. Recently, reservoir computing (RC) has emerged …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015‏ - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Development of Bio‐Voltage Operated Humidity‐Sensory Neurons Comprising Self‐Assembled Peptide Memristors

Z Lv, S Zhu, Y Wang, Y Ren, M Luo, H Wang… - Advanced …, 2024‏ - Wiley Online Library
Biomimetic humidity sensors offer a low‐power approach for respiratory monitoring in early
lung‐disease diagnosis. However, balancing miniaturization and energy efficiency remains …

Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology

H Sun, Q Liu, C Li, S Long, H Lv, C Bi… - Advanced Functional …, 2014‏ - Wiley Online Library
Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical
resistive switching (RS) phenomena in oxides, which could form the basis for memory …

Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

G Milano, M Luebben, Z Ma, R Dunin-Borkowski… - Nature …, 2018‏ - nature.com
The ability for artificially reproducing human brain type signals' processing is one of the main
challenges in modern information technology, being one of the milestones for develo** …

Recent developments and perspectives for memristive devices based on metal oxide nanowires

G Milano, S Porro, I Valov… - Advanced Electronic …, 2019‏ - Wiley Online Library
Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …

Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

R Khan, NU Rehman, N Ilyas, N Sfina, M Barhoumi… - Nanoscale, 2023‏ - pubs.rsc.org
Electronic devices featuring biomimetic behaviour as electronic synapses and neurons have
motivated the emergence of a new era in information and humanoid robotics technologies …

Lead-free monocrystalline perovskite resistive switching device for temporal information processing

JY Mao, Z Zheng, ZY **ong, P Huang, GL Ding… - Nano Energy, 2020‏ - Elsevier
Lead-free halide perovskites are emerging as promising candidate for practical application
of optoelectronic devices due to their nontoxicity. Unfortunately, previously-reported lead …