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[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Radiation damage effects in Ga 2 O 3 materials and devices
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …
hardness. Their suitability for space missions or military applications, where issues of …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Discussion on electric power supply systems for all electric aircraft
The electric power supply system is one of the most important research areas within
sustainable and energy-efficient aviation for more-and especially all electric aircraft. This …
sustainable and energy-efficient aviation for more-and especially all electric aircraft. This …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
Surface tuning for oxide-based nanomaterials as efficient photocatalysts
Due to the increasingly polluted environment and the gradual depletion of fossil fuel
reserves, the development of renewable technologies for environmental remediation and …
reserves, the development of renewable technologies for environmental remediation and …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation effects in algan/gan hemts
An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
Deep traps in GaN-based structures as affecting the performance of GaN devices
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
A review of gan hemt dynamic on-resistance and dynamic stress effects on field distribution
Gallium nitride (GaN) is an emerging wide-bandgap material with superior physical
characteristics, including critical electric field, electron mobility, and specific on-resistance …
characteristics, including critical electric field, electron mobility, and specific on-resistance …