The fabrication of NiO films by different routes is important to extend and improve their
applications as hole-transporting layers in organic and inorganic optoelectronic devices …

We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes
(LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes …

The effect of shell thickness on the performance of all-inorganic quantum dot light-emitting
diodes (QLEDs) is explored by employing a series of green quantum dots (QDs)(Zn x Cd1–x …

A hybrid cadmium sulfide nanoparticles (CdSNPs) electroluminescence (EL) device was
fabricated by Phase–Segregated Method and characterized. It was fabricated as layers of …

High efficiency all-inorganic quantum dot light emitting diodes are fabricated with metal
oxide charge transport layers. Alloyed CdSe/ZnS quantum dots are used as the active layer …

We report on numerical investigations of p-GaN/n-ZnO light-emitting devices with p-NiO
interlayer, and on LED design optimization which includes bandgap engineering, thickness …

The Al-doped ZnO (AZO)/indium tin oxide (ITO) bilayer films were proposed as transparent
contact layers (TCLs) for the fabrication of GaN-based light-emitting diodes (LEDs). In TCLs …

All inorganic quantum dot light emitting devices with solution processed transport layers are
investigated. The device consists of an anode, a hole transport layer, a quantum dot …

Herein, we report all solution-processed green quantum-dot light-emitting diodes (G-QLEDs)
by introducing a perfluorinated ionomer (PFI, Nafion 117) into quantum dots (QDs) to …

Develo** the heavy metal free QD-LEDs is required to curtail the risks to human beings
and environment. Nanoparticles that are ecofriendly, chemically stable, easy to synthesize …