Using nanowires for photodetection constitutes an opportunity to enhance the absorption
efficiency while reducing the electrical cross-section of the device. Nanowires present …

The power output of piezoelectric sensors based on nanowires (NWs) is governed by
various factors, but largely depends on the alignment of the NWs. However, aligning the …

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam
epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to …

Core‐shell gallium nitride (GaN)‐based nanowires offer noteworthy opportunities for
innovation in high‐frequency opto‐and microelectronics. This work delves deeply into the …

GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si (111)
substrates by plasma-assisted molecular beam epitaxy. In a systematic series of …

We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …

We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles
on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single …

GaN nanostructures are promising for a broad range of applications due to their 3D
structure, thereby exposing non-polar crystal surfaces. The nature of the exposed crystal …

Ultraviolet light-emitting diodes fabricated from N-polar AlGaN/GaN core–shell nanowires
(NWs) with p–i–n structure produced electroluminescence at 365 nm with∼ 5× higher …

Understanding the interplay between the structure, composition and opto-electronic
properties of semiconductor nano-objects requires combining transmission electron …