The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

The Ga (AsBi) material system opens opportunities in the field of high efficiency infrared
laser diodes. We report on the growth, structural investigations, and lasing properties of …

The electronic structure of highly mismatched semiconductor alloys is characterized by
carrier localization and strongly influenced by the local alloy microstructure. First-principles …

The structural and optical properties of GaAs1− xBix alloys for x up to 0.108 have been
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …

Abstract Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class
of near-infrared devices where, by use of the unusual band structure properties of GaAsBi …

Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …

The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy
(E g) accompanied with a large increase in the spin-orbit splitting energy (△ SO), leading to …