Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing
Z ** centers during charge carrier transfer, oxygen vacancy (VO) plays
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
ε‐Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators
Z Chen, X Lu, Y Tu, W Chen, Z Zhang… - Advanced …, 2022 - Wiley Online Library
The explosion of mobile data from the internet of things (IoT) is leading to the emergence of
5G technology with dramatic frequency band expansion and efficient band allocations …
5G technology with dramatic frequency band expansion and efficient band allocations …
Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials
Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in
electronics and optoelectronics. However, vital information of the properties of complex …
electronics and optoelectronics. However, vital information of the properties of complex …
Thermodynamically metastable α-, ε-(or κ-), and γ-Ga2O3: From material growth to device applications
ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
Orthorhombic undoped κ-Ga 2 O 3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …
Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition
K Kaneko, K Uno, R **no, S Fujita - Journal of Applied Physics, 2022 - pubs.aip.org
Routes to semi-stable phases of Ga2O3 are the subject of extended discussions based on
the review of growth methods, growth conditions, and precursors in works that report semi …
the review of growth methods, growth conditions, and precursors in works that report semi …
Demonstration of Bixbyite-Structured δ-Ga2O3 Thin Films Using β-Fe2O3 Buffer Layers by Mist Chemical Vapor Deposition
Gallium oxide (Ga2O3) possesses five polymorphs: α, β, γ, κ (ε), and δ. Although the first four
polymorphs have been well-studied, there are few reports on δ-Ga2O3. Here, we …
polymorphs have been well-studied, there are few reports on δ-Ga2O3. Here, we …