In this paper, we present a collection of results focussing on the transport properties of
doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and …

We describe the formalism of statistical irreversible thermodynamics constructed based on
Zubarev's nonequilibrium statistical operator (NSO) method, which is a powerful and …

Abstract The original Bose–Einstein condensation (BEC) was theoretically established in the
1920s, for the case of an ideal gas of boson particles (a consequence of the symmetry of the …

An analogy is drawn between version of non-equilibrium thermodynamics a distribution-
based containing an additional thermodynamic first-passage time parameter …

Construction, in the framework of a nonequilibrium statistical ensemble formalism, of a
higher-order generalized hydrodynamics, also referred to as mesoscopic …

An analysis of the influence of geometry and size on the thermal conductivity in
semiconductors, particularized to the study in Si and GaN, is presented. This is done in the …

Neste artigo consideramos os aspectos gerais dos temas emergentes na segunda metade
do século passado, de complexidade, auto-organização e informação. Os três estão ligados …

A hydrodynamic model describing the electron transport in silicon carbide semiconductors,
coupled with the heating of the crystal lattice, is presented. It has been obtained by taking …

A generalized Hydrodynamics, referred to as Mesoscopic Hydro-Thermodynamics, of
phonons in semiconductors is presented. It involves the descriptions of the motion of the …

A family of what can be so-called Maxwell times which arises in the context of higher-order
generalized hydrodynamics (HOGH; also called mesoscopic hydrothermodynamics) is …