Progress in Contact, Do** and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
Atomic layer deposition on 2D materials
2D materials are layered crystalline materials and are the most attractive nanomaterials due
to their potentials in next-generation electronics. Because most 2D materials are atomically …
to their potentials in next-generation electronics. Because most 2D materials are atomically …
Simultaneous synthesis and integration of two-dimensional electronic components
Abstract Two-dimensional (2D) materials such as transition metal chalcogenides can be
used to create different components of electronic devices, including semiconducting …
used to create different components of electronic devices, including semiconducting …
Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices
The successful realization of high-performance 2D-materials-based nanoelectronics
requires integration of high-quality dielectric films as a gate insulator. In this work, we …
requires integration of high-quality dielectric films as a gate insulator. In this work, we …
Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes
Dynamic random access memory (DRAM) has been a cornerstone of modern computing,
but it faces challenges as technology scales down, particularly due to the mismatch between …
but it faces challenges as technology scales down, particularly due to the mismatch between …
Integration of 2D materials for advanced devices: challenges and opportunities
Two-dimensional (2D) materials have captured the imagination and significant effort in the
research of advanced device concepts. In spite of interesting device physics and proof-of …
research of advanced device concepts. In spite of interesting device physics and proof-of …
[HTML][HTML] Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation
N Miyata - Applied Physics Letters, 2018 - pubs.aip.org
In this study, we found that stable interface dipole modulation (IDM) is possible for HfO 2/1-
monolayer TiO 2/SiO 2 stack structures prepared by using a low temperature annealing …
monolayer TiO 2/SiO 2 stack structures prepared by using a low temperature annealing …
Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer
In this work, thermal atomic layer deposition (ALD) of HfO 2 on monolayer (ML) MoS 2 with 1
nm Al 2 O 3 seed layer by e-beam evaporation was explored. With the 1 nm Al 2 O 3 seed …
nm Al 2 O 3 seed layer by e-beam evaporation was explored. With the 1 nm Al 2 O 3 seed …
Low-Temperature Physical Adsorption for the Nucleation of Sub-10 nm Al2O3 Gate Stack on Top-Gated WS2 Transistors
Two-dimensional tungsten disulfide (WS2) is one of the potential channel materials in future
nanoelectronics. In this paper, an atomic layer deposition (ALD) process based on low …
nanoelectronics. In this paper, an atomic layer deposition (ALD) process based on low …
Impacts of interface contaminations on the MoS2 field effect transistors and a modified fabrication process to pursue a better interface quality
The interface of the two-dimensional (2D) material plays a crucial role in the properties of the
material itself. When 2D materials are used as a channel for electrical devices, negative …
material itself. When 2D materials are used as a channel for electrical devices, negative …