In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN
nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift …

Scaling down semiconductor lasers in all three dimensions holds the key to the
development of compact, low-threshold, and ultrafast coherent light sources, as well as …