▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

We review the present status of the rapidly develo** field of semiconductor laser diodes
based on self-organized quantum dots (QDs). Several milestones have been achieved since …

Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well
(QW) and QW wire lasers due to their delta like density of states. Record threshold current …

Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been
demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown …

We demonstrated the 1.52 μm light emission at room temperature from self-assembled InAs
quantum dots embedded in the In 0.45 Ga 0.55 As strain-reducing layer. By cap** InAs …

It is shown that the optical properties of GaN quantum dots with the wurtzite structure result
from a balance between confinement and piezoelectric effects. In “large” quantum dots with …

Carrier relaxation in self-organized In 0.4 Ga 0.6 A s/G a A s quantum dots is investigated by
time-resolved differential transmission measurements. The dots have a base dimension of …

We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic
chemical vapor deposition. Successful growth of defect-free binary InAs/GaAs QDs with high …

Semiconductor heterostructures with self-organized quantum dots (QDs) have
experimentally exhibited properties expected for zero-dimensional systems. When used as …