Design and temperature analysis of tree-shaped nanosheet FET for analog and RF applications

U Gowthami, S Patta, VB Sreenivasulu - Physica Scripta, 2025 - iopscience.iop.org
An innovative breakthrough that addresses the shortcomings of FinFET is the use of tree-
shaped Nanosheet FET. This study examines the temperature dependence of the …

Rapid Detection of Biomolecules by Quarapul Cavity Extended Source Vertical Dielectric Modulated TFET (QESV-DM-TFET) Biosensor

NN Reddy, B Jayalakshmi, GS Rao… - … of Electron Devices …, 2024 - ieeexplore.ieee.org
In this This work presents the performance investigation of the quadruple cavity extended
source vertical TFET (QESV-DM-TFET) device for the detection of target biomolecules by …

Characteristic Variability of GAA Si NS CFETs Induced by Process Variation Effect and Intrinsic Parameter Fluctuation

MH Chuang, SR Kola, Y Li - 2024 International Conference on …, 2024 - ieeexplore.ieee.org
We simultaneously estimate impacts of process variation effect (PVE) consisting of three
major variations and intrinsic parameter fluctuation (IPF) including two crucial random …