Memristor modeling: challenges in theories, simulations, and device variability

L Gao, Q Ren, J Sun, ST Han, Y Zhou - Journal of Materials Chemistry …, 2021 - pubs.rsc.org
This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Recent progress in phase-change memory technology

GW Burr, MJ Brightsky, A Sebastian… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
We survey progress in the PCM field over the past five years, ranging from large-scale PCM
demonstrations to materials improvements for high–temperature retention and faster …

Phase change memory technology

GW Burr, MJ Breitwisch, M Franceschini… - Journal of Vacuum …, 2010 - pubs.aip.org
The authors survey the current state of phase change memory (PCM), a nonvolatile solid-
state memory technology built around the large electrical contrast between the highly …

Unraveling Crystallization Mechanisms and Electronic Structure of Phase‐Change Materials by Large‐Scale Ab Initio Simulations

Y Xu, Y Zhou, XD Wang, W Zhang, E Ma… - Advanced …, 2022 - Wiley Online Library
Abstract Ge–Sb–Te (“GST”) alloys are leading phase‐change materials for digital memories
and neuro‐inspired computing. Upon fast crystallization, these materials form rocksalt‐like …

Endurance of chalcogenide optical phase change materials: a review

L Martin-Monier, CC Popescu, L Ranno… - Optical Materials …, 2022 - opg.optica.org
Chalcogenide phase change materials (PCMs) are truly remarkable compounds whose
unique switchable optical and electronic properties have fueled an explosion of emerging …

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

S Sun, X Wang, Y Jiang, Y Lei, S Zhang… - npj Computational …, 2024 - nature.com
Chalcogenide phase-change materials (PCMs) are showing versatile possibilities in cutting-
edge applications, including non-volatile memory, neuromorphic computing, and nano …

Energy-efficient phase-change memory with graphene as a thermal barrier

C Ahn, SW Fong, Y Kim, S Lee, A Sood… - Nano …, 2015 - ACS Publications
Phase-change memory (PCM) is an important class of data storage, yet lowering the
programming current of individual devices is known to be a significant challenge. Here we …

[PDF][PDF] Phase-change memory materials by design: a strain engineering approach

X Zhou, J Kalikka, X Ji, L Wu, Z Song, RE Simpson - Adv. Mater, 2016 - researchgate.net
DOI: 10.1002/adma. 201505865 sub-layer atoms seems necessary to complete the
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …

Synaptic electronics and neuromorphic computing

NK Upadhyay, S Joshi, JJ Yang - Science China Information Sciences, 2016 - Springer
In order to map the computing architecture and intelligent functions of the human brain on
hardware, we need electronic devices that can emulate biological synapses and even …

Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

TY Yang, IM Park, BJ Kim, YC Joo - Applied Physics Letters, 2009 - pubs.aip.org
Atomic migration under an electric field, electromigration, in molten and crystalline Ge 2 Sb 2
Te 5 was studied using a pulsed dc stress to an isolated line structure. Under a single pulse …