In the last decade orthorhombic hafnia and zirconia films have attracted tremendous
attention arising from the discovery of ferroelectricity at the nanoscale. However, an initial …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

Doped HfO2 thin films, which exhibit robust ferroelectricity even with aggressive thickness
scaling, could potentially enable ultralow-power logic and memory devices. The ferroelectric …

A low-cost fabrication process of Hf Zr x O 2 (HZO) nonvolatile memory (NVM) was proposed
and its characteristics were investigated. We successfully fabricated a ferroelectric tunnel …

Instead of employing post metal annealing (PMA), post deposition annealing (PDA) was
proposed to crystalize HfZrO x (HZO) into the ferroelectric phase on an epitaxial Ge film with …

Abstract The do** of Hf 0.5 Zr 0.5 O 2 has attracted increasing attention because of the
further regulation of structure and ferroelectric properties. Here, Sr doped Hf 0.5 Zr 0.5 O 2 …

Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-
steep logical switching and low power non-volatile memory functions, have significant …

16-kb 1T-1C ferroelectric random access memory (FeRAM) arrays are demonstrated for 130-
nm node technology with TiN/HfO 2: Si/TiN ferroelectric capacitors integrated into the back …

The integration of ferroelectric-doped HfO2 thin films in advanced memory has been
impeded by high coercive fields (EC), requiring high operation voltages. The extremely …

In this article, we study the field cycling behavior of ALD-deposited ferroelectric Hf 0.5 Zr 0.5
O 2 with TiN as the top and bottom electrodes on the silicon substrate. We investigate the …