This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …

III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

We review the most recent technological and application advances of quantum cascade
lasers, underlining the present milestones and future directions from the Mid-infrared to the …

We present a review of existing and potential next-generation far-infrared (20-60 μm) optical
materials and devices. The far-infrared is currently one of the few remaining frontiers on the …

We review Ill-Nitride optoelectronic device technologies with an emphasis on recent
breakthroughs. We start with a brief summary of historical accomplishments and then report …

Beginning from the 1990s, an ever-lasting interest in the terahertz (THz) spectroscopy and
THz instruments has produced wide progress in the development of high-speed THz …

In the present paper, the linear and nonlinear optical absorption coefficients and refractive
index changes between the ground and the first excited states in double GaN/Al x Ga (1− x) …

Far-infrared photoconductive detectors based on intersubband transitions in III-nitride
semiconductor quantum wells are demonstrated. The device active material is based on a …

We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN
quantum wells. We find a trend of decreasing peak energy with increasing quantum well …

Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells
grown on a free-standing semi-polar (20 2 1) GaN substrate. These quantum wells are …