Polymorphism in post-dichalcogenide two-dimensional materials
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and
associated versatility of properties. Furthermore, for a given composition, a variety of …
associated versatility of properties. Furthermore, for a given composition, a variety of …
Quantum interference and Aharonov–Bohm oscillations in topological insulators
Topological insulators (TIs) have an insulating bulk but a metallic surface. In the simplest
case, the surface electronic structure of a three-dimensional (3D) TI is described by a single …
case, the surface electronic structure of a three-dimensional (3D) TI is described by a single …
Manifestation of Topological Protection in Transport Properties of Epitaxial Thin Films
The massless Dirac fermions residing on the surface of three-dimensional topological
insulators are protected from backscattering and cannot be localized by disorder, but such …
insulators are protected from backscattering and cannot be localized by disorder, but such …
Crossover between Weak Antilocalization and Weak Localization in a Magnetically<? format?> Doped Topological Insulator
We report transport studies on magnetically doped Bi 2 Se 3 topological insulator ultrathin
films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a …
films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a …
Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals <?format ?>of the Topological Insulator
We report a transport study of exfoliated few monolayer crystals of topological insulator Bi 2
Se 3 in an electric field effect geometry. By do** the bulk crystals with Ca, we are able to …
Se 3 in an electric field effect geometry. By do** the bulk crystals with Ca, we are able to …
Thickness-dependent bulk properties and weak antilocalization effect in topological insulator BiSe
We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
We study coherent electronic transport in charge-density-tunable microdevices patterned
from thin films of the topological insulator (TI) Bi 2 Se 3. The devices exhibit pronounced …
from thin films of the topological insulator (TI) Bi 2 Se 3. The devices exhibit pronounced …
Evidence for electron-electron interaction in topological insulator thin films
We consider in our work single crystal thin films of Bi 2 Se 3, grown by molecular beam
epitaxy, both with and without Pb do**. Angle-resolved photoemission data demonstrate …
epitaxy, both with and without Pb do**. Angle-resolved photoemission data demonstrate …
Competition between weak localization and antilocalization in topological surface states
A magnetoconductivity formula is presented for the surface states of a magnetically doped
topological insulator. It reveals a competing effect of weak localization and weak …
topological insulator. It reveals a competing effect of weak localization and weak …
Tunable surface conductivity in BiSe revealed in diffusive electron transport
We demonstrate that the weak antilocalization effect can serve as a convenient method for
detecting decoupled surface transport in topological insulator thin films. In the regime where …
detecting decoupled surface transport in topological insulator thin films. In the regime where …