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p-Type trigate junctionless nanosheet MOSFET: analog/RF, linearity, and circuit analysis
Abstract Silicon (Si) nanosheet (NS) metal-oxide semiconductor field effect transistors
(MOSFETs) are realized as an outstanding structure to obtain better area scaling and power …
(MOSFETs) are realized as an outstanding structure to obtain better area scaling and power …
Extraction of performance parameters of nanoscale SOI LDD-FinFET using a semi-analytical model of capacitance and channel potential for low-power applications
In this paper, we have investigated the performance of a silicon-based low-doped drain
(LDD) SOI-FinFET for the first time and compared it with conventional FinFET for …
(LDD) SOI-FinFET for the first time and compared it with conventional FinFET for …
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
B Xu, G Wang, Y Du, Y Miao, Y Wu, Z Kong, J Su, B Li… - Nanomaterials, 2022 - mdpi.com
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was
investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures …
investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures …
On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer
This paper reports a thorough investigation of the impacts of a spacer dielectric on the
performance of HfO 2-ferroelectric-based negative capacitance (NC)-FinFETs for 10 nm …
performance of HfO 2-ferroelectric-based negative capacitance (NC)-FinFETs for 10 nm …
Investigation of Self‐Heating Effect in Inverters: Structural Design and Optimization Design of 14 nm Silicon‐on‐Insulator Fin Field‐Effect Transistor
Z Qin, L Chen, R Lu, Y Wang, X Hao, R Chen… - physica status solidi … - Wiley Online Library
In this research, the characterization of the self‐heating effect of rectangular fin angle (RF‐
SOI) Fin field‐effect transistor (FinFET) and trapezoidal fin angle (TF‐SOI) FinFET at different …
SOI) Fin field‐effect transistor (FinFET) and trapezoidal fin angle (TF‐SOI) FinFET at different …
A Novel CMOS Structure Composed of Junctionless n-FinFET with the Same n-Channel and Common Gate
X Shi, H Hu, Y Wang, L Wang, B Wang… - 2022 2nd International …, 2022 - ieeexplore.ieee.org
In this paper, a novel CMOS inverter with the same n-channel and same gate work function
has been proposed. This new structure is composed of junctionless (JL) n-FinFET and …
has been proposed. This new structure is composed of junctionless (JL) n-FinFET and …
[PDF][PDF] Performance optimization and sensitivity analysis of junctionless FinFET with asymmetric do** profile
Z Ahangari, E Asadi, SA Hosseini - Journal of Nanoanalysis, 2020 - journals.iau.ir
Generally, as the dimensions of conventional metal-oxide-field effect transistor (MOSFET)
are scaling down, challenges better known as short channel effects have emerged, which …
are scaling down, challenges better known as short channel effects have emerged, which …