Silicon carbide (SiC) is recognized as one of the shining stars of third generation
semiconductors, because of its preeminent characteristics, for instance, outstanding …

SiC nanowires are of high interest since they combine the physical properties of SiC with
those induced by their low dimensionality. For this reason, a large number of scientific …

An atomistic full-band quantum transport simulator has been developed to study three-
dimensional Si nanowire field-effect transistors in the presence of electron-phonon …

The advantageous physical properties of bulk Silicon Carbide (SiC) in association with the
anticipated enhancement of specific physical properties in one-dimensional (1D) …

This paper and the companion work present a full quantum study of the influence of interface
traps on the IV characteristics of InAs nanowire Tunnel-field effect transistors (FETs) and …

We report for the first time the fabrication of p-type SiC nanowire field-effect transistors
(FETs) using an individual Al-doped 3C-SiC nanowire with a single crystalline structure. The …

We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying
on few physical parameters calibrated against density functional theory (DFT) band structure …

In this paper, we study the effect of phonon scattering in silicon nanowire field effect
transistors (NWFET) using a Non-equilibrium Green's function formalism in the effective …

Novel SiOC nanocomposites were successfully synthesized from commercial silica sol and
sucrose via a simply designed route. The formation of SiOC nanocomposites was studied …

We present a numerical study aimed to benchmark short gate InAs nanowire-FETs (NW-
FETs) against their strained Si (sSi) counterpart. Our full-quantum simulations focus on both …