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In-plane monolithic integration of scaled III-V photonic devices
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost
advanced silicon platform with III-V-based active gain material. The monolithic integration of …
advanced silicon platform with III-V-based active gain material. The monolithic integration of …
Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
We report on high-quality InGaAs/GaAs multi-quantum well waveguide photodetectors,
monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth …
monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth …
Hybrid III–V silicon photonic crystal cavity emitting at telecom wavelengths
Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits
due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a …
due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a …
Butt-coupled III-V photodetector monolithically integrated on soi with data reception at 50 Gbps OOK
Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps
OOK Page 1 Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data …
OOK Page 1 Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data …
Accelerated dark current degradation study of monolithically integrated In0.2Ga0.8As/GaAs-on-Si nano-ridge photodetectors
The reliability of In 0.2 Ga 0.8 As/GaAs nano-ridge photodetectors monolithically integrated
on 300 mm Si substrates is first reported. Dark current increases and saturates at 2× 10-5 …
on 300 mm Si substrates is first reported. Dark current increases and saturates at 2× 10-5 …
0.3 pA Dark current and 0.65 A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm si wafer
We report pin InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors
monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 …
monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 …
Scaled III-V optoelectronic devices on silicon
In the present talk we discuss the development of the epitaxial technique Template-Assisted
Selective Epitaxy (TASE) and its application for the monolithic integration of scaled III-V …
Selective Epitaxy (TASE) and its application for the monolithic integration of scaled III-V …
Monolithic integration of III-V photodiodes and emitters on silicon
Waveguide coupled III-V heterostructure photodetectors are fabricated by template-assisted
selective epitaxy. The devices show responsivities up to 0.2 A/W and 3dB frequencies …
selective epitaxy. The devices show responsivities up to 0.2 A/W and 3dB frequencies …
In-plane monolithic integration of scaled III-V photonic devices
In-plane monolithic integration of scaled III-V photonic devices Page 1 In-plane monolithic
integration of scaled III-V photonic devices N. Vico Triviño, S. Mauthe, M. Scherrer, P. Tiwari …
integration of scaled III-V photonic devices N. Vico Triviño, S. Mauthe, M. Scherrer, P. Tiwari …
Intégration hybride de sources laser III-V sur Si par collage direct et recroissance pour les télécommunications à haut débit
C Besancon - 2020 - theses.hal.science
Ce travail présente une approche d'intégration de semiconducteurs III-V sur silicium.
L'objectif est de réaliser des sources laser multi-longueur d'onde émettant en bande C pour …
L'objectif est de réaliser des sources laser multi-longueur d'onde émettant en bande C pour …