First demonstration of BEOL-compatible 3D vertical FeNOR

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Ferroelectric capacitive memories: devices, arrays, and applications‏

Z Zhou, L Jiao, Z Zheng, Y Chen, K Han, Y Kang… - Nano …, 2025‏ - Springer‏
Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate
device capacitance for data storage, providing a new technological pathway to achieve two …‏
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An Efficient Flash-Based Computing-in-Memory (CIM) Demonstration of High-Precision (32-bit) Nonlinear Partial Differential Equation (PDE) Solver With Ultra-High …‏

Y Feng, Z Sun, C Wang, X Guo, J Mei… - … on Circuits and …, 2024‏ - ieeexplore.ieee.org‏
Solving partial differential equations (PDEs) requires precise numerical iterations that
impose significant demands on computational resources and memory capacities, which can …‏
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Temperature-Dependent Two-Phase Switching of the HfO2-Based Ferroelectric Polarization‏

L Jiao, Z Zhou, Z Zheng, X Wang, J **e… - … on Electron Devices, 2025‏ - ieeexplore.ieee.org‏
In this work, we accurately observed the polarization switching characteristics of the HfO 2-
based ferroelectric (FE) materials using well-engineered Zr-doped HfO 2 (HZO) metal–FE …‏
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