Ethers on Si (001): a prime example for the common ground between surface science and molecular organic chemistry

L Pecher, S Laref, M Raupach… - Angewandte Chemie …, 2017 - Wiley Online Library
By using computational chemistry it has been shown that the adsorption of ether molecules
on Si (001) under ultrahigh vacuum conditions can be understood with classical concepts of …

Precursor states of organic adsorbates on semiconductor surfaces are chemisorbed and immobile

L Pecher, R Tonner - ChemPhysChem, 2017 - Wiley Online Library
Intermediate states to covalent attachment of molecules on surfaces, so called precursors,
are usually considered to be physisorbed and mobile. We show that this view should be …

Binding Energy and Dissociation Barrier: Experimental Determination of the Key Parameters of the Potential Energy Curve of Diethyl Ether on Si (001)

M Reutzel, M Lipponer, M Dürr… - The Journal of Physical …, 2015 - ACS Publications
The key parameters of the potential energy curve of organic molecules on semiconductor
surfaces, binding energy of the intermediate state and dissociation barrier, were …

Effect of carbon chain length of chlorinated carboxylic acids on morphology of the carbon films electrodeposited from aqueous solutions

M Wu, L Wang, S Wang, J Wei, W Wang, X Chen… - Colloids and Surfaces A …, 2021 - Elsevier
Diamond-like carbon films can be electrodeposited from organic acids in aqueous solutions.
Chlorinated carboxylic acids with different chain lengths, ie. chloroacetic acid, 3 …

Dissociative adsorption of CH3X (X= Br and Cl) on a silicon (100) surface revisited by density functional theory

CG Wang, K Huang, W Ji - The Journal of Chemical Physics, 2014 - pubs.aip.org
During the dissociative adsorption on a solid surface, the substrate usually participates in a
passive manner to accommodate fragments produced upon the cleavage of the internal …

Adsorption of trimethyl phosphite at the Ge (100)-2× 1 surface by nucleophilic reaction

KT Wong, B Shong, W Sun, SF Bent - The Journal of Physical …, 2013 - ACS Publications
Although phosphorus adsorption on semiconductors has potential applications in sensors,
adhesion promoters, wear-resistant coatings, and monolayer do** for ultrashallow …

Dynamics of surface-migration: Electron-induced reaction of 1, 2-dihaloethanes on Si (100)

K Huang, O MacLean, SY Guo, IR McNab, Z Ning… - Surface Science, 2016 - Elsevier
Abstract Scanning Tunneling Microscopy was used to investigate the electron-induced
reaction of 1, 2-dibromoethane (DBE) and 1, 2-dichloroethane (DCE) on Si (100). We …

Temperature-programmed desorption (TPD) and density functional theory (DFT) study comparing the adsorption of ethyl halides on the Si (100) surface

J Zhao, BW Noffke, K Raghavachari… - The Journal of …, 2017 - ACS Publications
The differences between the dissociative adsorption of chloroethane-d 5 (C2D5Cl) and
iodoethane-d 5 (C2D5I) on a Si (100)-2× 1 surface are compared by analyzing the results of …

Adsorbate alignment in surface halogenation: standing up is better than lying down

K Huang, IR McNab, JC Polanyi, J Yang - Angewandte Chemie, 2012 - Wiley Online Library
Almost half a century ago, it was demonstrated that an aligned gaseous reagent molecule
had a reactivity for abstractive halogen-atom transfer that depended on the direction of …

Charge-transfer in silicon governs the pattern of dissociative attachment of hydrogen halides: HCl, HBr, and HI

SY Guo, M Ebrahimi, IR McNab… - The Journal of Physical …, 2016 - ACS Publications
The dissociative attachment of hydrogen halides, HCl, HBr, and HI, on Si (100) was studied
by scanning tunneling microscopy, and modeled by molecular dynamics computations …