Static I-Vcharacterization (SIVC) is extensively used by the researchers for evaluating the
ON-state performance and real-time condition monitoring of the power semiconductor …

A mixed-signal approach for “real-time”, fully-controlled, load-pull parameters sweeps is
presented. The proposed approach permits high-speed swee** of any combination of …

Pulsed VNAs enabling large dynamic measurement at a low pulse duty cycle are necessary
for the characterization of active devices due to the overheating damage risk under …

An in-house general-purpose microcontroller-based pulse generator is presented and
described in detail. Besides producing a pulse train with assigned specifications, the system …

In this paper a thermoreflectance measurement technique is used to capture the channel
temperature within a GaN-on-Si HEMT during pulsed IV excitation. Using pulsed IV …

During the past several years, silicon-germanium heterojunction bipolar transistor (SiGe
HBT) technology has entered the global semiconductor electronics market and SiGe HBT …