Soft switching for both primary and secondary side devices is available by using LLC
converters. This resonant converter is an ideal candidate for today's high frequency, high …

In this work, we propose a novel optically-controlled vertical GaN finFET directly triggered by
low-power ultraviolet (UV) illumination. The proposed device consists of a normally-off …

We propose an optimization method to change the Al component and the thickness of step-
graded AlGaN barrier to achieve better electrical performance of the device. Based on the …

Light-triggered, AlInN/GaN high-electron-mobility transistors (HEMTs) are presented.
Selective thermal oxidation of the AlInN barrier between the source and drain depletes the …

This paper describes a single-event burnout (SEB) simulation for a conventional GaN
MISFET field plate (FPC-MISFET) and a MISFET with an embedded pn junction (EJ …

An optical controlled AlGaN/GaN semiconductor power transistor with a low on-resistance
normally off high electron mobility two-dimensional electron gas (2DEG) channel is …

This paper proposes a new breakdown-enhanced gallium nitride (GaN) metal–insulator–
semiconductor field-effect transistor (MISFET) with the architecture of a double channel and …

N-polar AlGaN epi-layer was realized on AlN seeding layer grown with a novel flow-
modulation method. The polarity reversion from Al (Ga)-polar to N-polar for AlGaN/AlN films …

In this paper, a new structure for GaN MISFET is proposed to enhance its breakdown
voltage. The proposed structure uses an Aluminum nitride (AlN) buried layer embedded …

In current work, HfO 2/SiO 2 nanolaminates and HfO 2 films were grown on AlGaN/GaN
substrates via plasma-enhanced atomic layer deposition. A comparative study of how rapid …