A novel state-resolved actinometry method to determine the nitrogen atom number density in the ground state and intra-shell excited states in low-pressure electron …
XM Zhu, L Wang, YF Wang, Y Wang… - Plasma Sources …, 2024 - iopscience.iop.org
The active-particle number density is a key parameter for plasma material processing, space
propulsion, and plasma-assisted combustion. The traditional actinometry method focuses on …
propulsion, and plasma-assisted combustion. The traditional actinometry method focuses on …
TCAD augmented generative adversarial network for hot-spot detection and mask-layout optimization in a large area HARC etching process
Cost-effective vertical etching of plug holes and word lines is crucial in enhancing 3D NAND
device manufacturability. Even though multiscale technology computer-aided design …
device manufacturability. Even though multiscale technology computer-aided design …
Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features
Vertical scaling technique faces a physical limitation in 3D NAND device fabrication, even
assuming superior etching technology. Another promising scaling technique to increase the …
assuming superior etching technology. Another promising scaling technique to increase the …
Optimization of overshoot in the pulsed radio frequency inductively coupled argon plasma by step waveform modulation
XY Lv, QZ Zhang, K Jiang, F Gao… - Journal of Applied Physics, 2023 - pubs.aip.org
The pulsed inductively coupled plasma (ICP) has considerable potential to satisfy multiple
stringent scaling requirements for use in the semiconductor industry. However, overshoot of …
stringent scaling requirements for use in the semiconductor industry. However, overshoot of …
Spatio-temporal measurements of overshoot phenomenon in pulsed inductively coupled discharge
XY Lv, F Gao, QZ Zhang, YN Wang - Chinese Physics B, 2021 - iopscience.iop.org
Pulse inductively coupled plasma has been widely used in the microelectronics industry, but
the existence of overshoot phenomenon may affect the uniformity of plasma and generate …
the existence of overshoot phenomenon may affect the uniformity of plasma and generate …
Spatially averaged ion temperature model for low-temperature plasma sources
DC Kwon, YG Yook, SY Chung… - Journal of Physics D …, 2022 - iopscience.iop.org
Although the ion temperature can considerably affect bulk plasma parameters and ion angle
distribution functions arriving at the substrate, limited experiments have been conducted on …
distribution functions arriving at the substrate, limited experiments have been conducted on …