Organic semiconductors for device applications: current trends and future prospects

S Ahmad - Journal of Polymer Engineering, 2014 - degruyter.com
With the rich experience of develo** silicon devices over a period of the last six decades,
it is easy to assess the suitability of a new material for device applications by examining …

Tailoring the molecular weight of polymer additives for organic semiconductors

Z He, Z Zhang, S Bi - Materials Advances, 2022 - pubs.rsc.org
A binary system comprising both an organic semiconductor and a polymer additive has
attracted extensive research interests due to its great potential for use in high-performance …

Contact resistance and megahertz operation of aggressively scaled organic transistors

F Ante, D Kälblein, T Zaki, U Zschieschang, K Takimiya… - small, 2012 - Wiley Online Library
Organic thin-film transistors (TFTs) are of interest for large-area electronics applications,
such as conformable sensor arrays and flexible active-matrix displays, in which the TFTs will …

Charge injection process in organic field-effect transistors

T Minari, T Miyadera, K Tsukagoshi, Y Aoyagi… - Applied Physics …, 2007 - pubs.aip.org
The charge injection process in top-contact organic field-effect transistors was energetically
observed with displacement of the Fermi level as a result of scanning the gate voltage …

On the origin of contact resistances of organic thin film transistors.

M Marinkovic, D Belaineh, V Wagner… - … (Deerfield Beach, Fla.), 2012 - europepmc.org
On the origin of contact resistances of organic thin film transistors. - Abstract - Europe PMC Sign
in | Create an account https://orcid.org Europe PMC Menu About Tools Developers Help Contact …

Orders‐of‐magnitude reduction of the contact resistance in short‐channel hot embossed organic thin film transistors by oxidative treatment of Au‐electrodes

B Stadlober, U Haas, H Gold, A Haase… - Advanced functional …, 2007 - Wiley Online Library
In this study we report on the optimization of the contact resistance by surface treatment in
short‐channel bottom‐contact OTFTs based on pentacene as semiconductor and SiO2 as …

Correlation between grain size and device parameters in pentacene thin film transistors

SD Wang, T Miyadera, T Minari, Y Aoyagi… - Applied Physics …, 2008 - pubs.aip.org
We develop a general approach to precisely extract the device parameters in top-contact
pentacene thin film transistors. The charge trap sites are clarified by analyzing the grain size …

Metal–semiconductor contact in organic thin film transistors

SW Rhee, DJ Yun - Journal of Materials Chemistry, 2008 - pubs.rsc.org
Optimization of the interface between the source/drain electrode and the organic
semiconductor is one of the important factors for organic thin film transistor (OTFT) …

Atomic Imaging of the Irreversible Sensing Mechanism of NO2 Adsorption on Copper Phthalocyanine

JH Park, JE Royer, E Chagarov… - Journal of the …, 2013 - ACS Publications
Ambient NO2 adsorption onto copper (II) phthalocyanine (CuPc) monolayers is observed
using ultrahigh vacuum (UHV) scanning tunneling microscopy (STM) to elucidate the …

Achievement of balanced electron and hole mobility in copper-phthalocyanine field-effect transistors by using a crystalline aliphatic passivation layer

M Kraus, S Haug, W Brütting, A Opitz - Organic Electronics, 2011 - Elsevier
Ambipolar charge carrier transport of copper phthalocyanine (CuPc) field-effect transistors
with an aliphatic and insulating tetratetracontane (TTC) interlayer are investigated …