HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Charge trap** at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trap** has long been made responsible for random telegraph and 1/f …

Electric field effects on the thermal emission of traps in a diode have been studied.
Calculations were performed and compared with experimental data on deep centers in …

It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …

Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is
still plagued by defect response, and there is a large discrepancy between measured and …

The charge retention characteristics in scaled SONOS nonvolatile memory devices with an
effective gate oxide thickness of 94 Å and a tunnel oxide of 15 Å are investigated in a …

The anomalous leakage current IL in LPCVD polysilicon MOSFET's is attributed to field
emission via grain-boundary traps in the (front) surface depletion region at the drain, and an …

We present an analytical retention model for scaled SONOS devices in the excess electron
state. In this model, trap-to-band tunneling and thermal excitation discharge mechanisms …

Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and
neuromorphic computing; however, for advanced applications, single domain dynamics and …

Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor
field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic …