In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

The compact model plays a pivotal role as a critical link between device fabrication and
circuit design. While conventional compact model theories and techniques are generally …

This paper presents a physics-based analytical channel charge model for indium-rich In x
Ga 1-x As/In 0.52 Al 0.48 As quantum-well (QW) field-effect transistors (FETs) that is …

In this paper, a full parameter extraction flow of Schottky diodes is proposed as the extension
of previous resonance-based inductance extraction method. This extraction flow is applied …

In this paper, we report a model to AlGaN/GaN power HEMT based on the artificial
intelligence (AI) technology, wherein the model focuses on the subthreshold swing of the …