Electron scattering mechanisms in indium-tin-oxide thin films: grain boundary and ionized impurity scattering
HC Lee, OO Park - Vacuum, 2004 - Elsevier
Carrier concentrations and mobilities of indium-tin-oxide (ITO) thin films by DC magnetron
sputtering at the various process temperatures were measured using the Hall Technique …
sputtering at the various process temperatures were measured using the Hall Technique …
[BOOK][B] Transparent semiconducting oxides: bulk crystal growth and fundamental properties
Z Galazka - 2020 - taylorfrancis.com
This book discusses various aspects of different bulk TSO single crystals in terms of
thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution …
thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution …
Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing
JA Hillier, P Patsalas, D Karfaridis, S Camelio… - Scientific Reports, 2022 - nature.com
Transparent conductive oxides are appealing materials for optoelectronic and plasmonic
applications as, amongst other advantages, their properties can be modulated by …
applications as, amongst other advantages, their properties can be modulated by …
Electronic structure of indium-tin-oxide films fabricated by reactive electron-beam deposition
Thin films of indium tin oxide [(ITO), In 2 O 3: Sn] have been grown by reactive electron beam
deposition. Annealing in ultrahigh vacuum and, subsequently, in situ room temperature …
deposition. Annealing in ultrahigh vacuum and, subsequently, in situ room temperature …
Surface characterization of sol-gel derived indium tin oxide films on glass
PK Biswas, A De, LK Dua, L Chkoda - Bulletin of Materials Science, 2006 - Springer
Indium tin oxide (ITO) films containing different In: Sn atomic ratios, viz. 90: 10, 70: 30, 50:
50, 30: 70, were deposited on two types of glass substrates by sol-gel spinning technique …
50, 30: 70, were deposited on two types of glass substrates by sol-gel spinning technique …
Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films
RX Wang, CD Beling, S Fung, AB Djurišić… - Journal of applied …, 2005 - pubs.aip.org
The influence of postannealing in different gaseous environments on the optical properties
of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation …
of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation …
The effect of annealing treatment on microstructure and properties of indium tin oxides films
CH Yang, SC Lee, SC Chen, TC Lin - Materials Science and Engineering: B, 2006 - Elsevier
Indium tin oxide (ITO) thin films were prepared by radio frequency (rf) magnetron sputtering
system with high-density ITO target (90wt.% In2O3 and 10wt.% SnO2). The microstructure of …
system with high-density ITO target (90wt.% In2O3 and 10wt.% SnO2). The microstructure of …
AFM, XPS and RBS studies of the growth process of CdS thin films on ITO/glass substrates deposited using an ammonia-free chemical process
This paper deals with a detailed study of the growth stages of CdS thin films on ITO/glass
substrates by chemical bath deposition (CBD). The chemical and morphological …
substrates by chemical bath deposition (CBD). The chemical and morphological …
Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts
We carried out a series of simulations analyzing the dependence of mirror reflectance,
threshold current density, and differential efficiency on the scattering loss caused by the …
threshold current density, and differential efficiency on the scattering loss caused by the …
Effect of heat treatment on properties of melt-grown bulk In 2 O 3 single crystals
Melt-grown bulk In2O3 single crystals were utilized for systematic heat-treatment
experiments, which we performed at temperatures of 200–1400° C, for 2–300 h and in eight …
experiments, which we performed at temperatures of 200–1400° C, for 2–300 h and in eight …