Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently
offer the highest overall efficiency for solid state lighting applications. Although current …

The developments of high performance InGaN based micro-light-emitting diodes (μLEDs)
are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art …

Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

This article discusses the key challenges and the recent breakthroughs in realizing high-
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …

Sidewall emission of a micro-scale light emitting diode (micro-LED) improves the light
extraction efficiency, but it causes mismatched angular distributions between AlGaInP-based …

The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of
group III-nitrides on thermally active substrates at low temperature. The precursors …