Sub-10 nm two-dimensional transistors: Theory and experiment

R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang… - Physics Reports, 2021 - Elsevier
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Recent progress in CVD growth of 2D transition metal dichalcogenides and related heterostructures

Y Zhang, Y Yao, MG Sendeku, L Yin, X Zhan… - Advanced …, 2019 - Wiley Online Library
In recent years, 2D layered materials have received considerable research interest on
account of their substantial material systems and unique physicochemical properties …

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

C Pan, CY Wang, SJ Liang, Y Wang, T Cao… - Nature …, 2020 - nature.com
Reconfigurable logic and neuromorphic devices are crucial for the development of high-
performance computing. However, creating reconfigurable devices based on conventional …

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

M Peng, R **e, Z Wang, P Wang, F Wang, H Ge… - Science …, 2021 - science.org
Blackbody-sensitive room-temperature infrared detection is a notable development direction
for future low-dimensional infrared photodetectors. However, because of the limitations of …

Emerging in‐plane anisotropic two‐dimensional materials

L Li, W Han, L Pi, P Niu, J Han, C Wang, B Su, H Li… - InfoMat, 2019 - Wiley Online Library
Black phosphorus (BP) is a rapidly up and coming star in two‐dimensional (2D) materials.
The unique characteristic of BP is its in‐plane anisotropy. This characteristic of BP ignites a …

Logic gates based on neuristors made from two-dimensional materials

H Chen, X Xue, C Liu, J Fang, Z Wang, J Wang… - Nature …, 2021 - nature.com
A single biological neuron can efficiently perform Boolean operations. Artificial
neuromorphic systems, on the other hand, typically require several devices to complete a …

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Y Wang, S Liu, Q Li, R Quhe, C Yang… - Reports on Progress …, 2021 - iopscience.iop.org
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

M Wu, Y **ao, Y Zeng, Y Zhou, X Zeng, L Zhang… - InfoMat, 2021 - Wiley Online Library
Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D)
transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to …

Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction

Y He, P Tang, Z Hu, Q He, C Zhu, L Wang… - Nature …, 2020 - nature.com
Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials
and key structures for electrocatalysis. So far, their edges, dopant heteroatoms and defects …

Nanopatterning technologies of 2D materials for integrated electronic and optoelectronic devices

S Liu, J Wang, J Shao, D Ouyang, W Zhang… - Advanced …, 2022 - Wiley Online Library
With the reduction of feature size and increase of integration density, traditional 3D
semiconductors are unable to meet the future requirements of chip integration. The current …