Do** mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the
enabling step in the electronic and optoelectronic revolutions. The recent emergence of a …

The absolute energy positions of conduction and valence band edges were compiled for
about 50 each semiconducting metal oxide and metal sulfide minerals. The relationships …

Chemists and material scientists have often focused on the properties of previously reported
compounds, but neglect numerous unreported but chemically plausible compounds that …

All-electron band-structure calculations and photoemission experiments on II-VI
semiconductors both exhibit a metal d subband inside the main valence band. It has …

Future spintronics technologies based on diluted magnetic semiconductors (DMSs) will rely
heavily on a sound understanding of the microscopic origins of ferromagnetism in such …

In this work an overview of transition metal (TM) ion-and rare earth (RE) ion-doped crystals
for application as tunable solid-state lasers will be given. Spectroscopic and laser results will …

Transition-metal-doped zinc chalcogenide crystals have recently been investigated as
potential mid-infrared lasers. Tetrahedrally coordinated Cr/sup 2+/ions are especially …

The paper reviews material, spectroscopic, laser and nonlinear optical properties of wide-
band Cr2+-doped II–VI materials. The strong revival of research interest in these materials is …

Since transition-metal impurity levels are found to be aligned with respect to each other
within a group of isovalent semiconductor compounds, as if a common reference level …

Publisher Summary The chapter presents a discussion on electronic structure of three-
dimensional (3d) transition-atom impurities in semiconductors. The effects of 3d impurities in …