This review attempts to compile the physics and chemistry of defects in zinc oxide (ZnO), at
both, the fundamental and application levels. The defects, either inherent ones or introduced …

Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …

We report on the properties of nonpolar (Zn, Mg) O/ZnO quantum wells (QW)
homoepitaxially grown by molecular beam epitaxy on a-plane ZnO substrates. We …

J.-M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zuniga-Perez, C. Morhain; Interface
structure and anisotropic strain relaxation of nonpolar wurtzite (11 2) and (10 1) orientations …

Using high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction, we
investigated the strain relaxation mechanisms for nonpolar (11− 20) a-plane ZnO epitaxy on …

Although zinc oxide is a promising material for the fabrication of short wavelength
optoelectronic devices, p-type do** is a step that remains challenging for the realization of …

Atomically smooth, pseudomorphic (Al 1− x Ga x) 2 O 3 thin films were grown for 0≤ x< 0.08
on R-plane sapphire (01.2) by pulsed laser deposition at growth temperatures up to 1000 C …

We report the homoepitaxial growth by molecular beam epitaxy of high quality nonpolar m-
plane ZnO and ZnO: N films over a large temperature range. The nonintentionally doped …

Carbon-carbon composites (CCCs) are well recognized structural materials which are
generally known for their high strength and thermal conductivity, low density, and open cell …