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Significantly Enhanced Interfacial Thermal Conductance across GaN/Diamond Interfaces Utilizing AlxGa1–xN as a Phonon Bridge
Improving the thermal conductance at the GaN/diamond interface is crucial for boosting GaN-
based device performance and reliability. In this study, first-principles calculations and …
based device performance and reliability. In this study, first-principles calculations and …
Measurement of interfacial thermal resistance in high-energy-density matter
CH Allen, M Oliver, DO Gericke, N Brouwer… - Nature …, 2025 - nature.com
Heat transport across interfaces is a ubiquitous phenomenon with many unresolved aspects.
In particular, it is unknown if an interfacial thermal resistance (ITR) occurs in matter with high …
In particular, it is unknown if an interfacial thermal resistance (ITR) occurs in matter with high …
Modulating interfacial thermal conductance of atomic-scale Si/Si and Al/Al interfaces via adjusting twist angles
Y Dong, H Cheng, Y Tao, Y Ding, M Huang… - Applied Surface …, 2025 - Elsevier
While various methods have been proposed to modulate interfacial heat transport in
semiconductors and metals, the intrinsic mechanisms by which twist angle affects interfacial …
semiconductors and metals, the intrinsic mechanisms by which twist angle affects interfacial …
Multiscale thermal analysis of diamond/Cu composites for thermal management applications by combining lattice Boltzmann and finite element methods
Y Zhu, E Yin, W Luo, Q Li - International Journal of Thermal Sciences, 2025 - Elsevier
To meet the cooling demands of high-power electronic devices, diamond/Cu composites
(D/Cu) have attracted extensive attention as next-generation thermal management …
(D/Cu) have attracted extensive attention as next-generation thermal management …
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
To enhance interfacial thermal transport at the GaN/diamond interface is of significant
interest due to its potential applications in high-power electronic devices. In this work, we …
interest due to its potential applications in high-power electronic devices. In this work, we …
Formation of nanoscale phases during rapid solidification of Al–Cu–Si alloys
In this work, the formation of nanoscale phases in Al30Cu40Si30, Al33. 3Cu33. 3Si33. 3 and
Al60Cu20Si20 alloys as a result of rapid crystallization was investigated. For this purpose …
Al60Cu20Si20 alloys as a result of rapid crystallization was investigated. For this purpose …