Ferroelectric materials have shown great value in the modern semiconductor industry and
are considered important function materials due to their high dielectric constant and tunable …

The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy
dissipation in conventional electronics, often termed as Boltzmann Tyranny,,,,. Negative …

It has been shown that a ferroelectric material integrated into the gate stack of a transistor
can create an effective negative capacitance (NC) that allows the device to overcome …

With the progress in silicon circuit miniaturization, lowering power consumption becomes the
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …

Inspired by the recent achievements of the two-dimensional (2D) sub-5 nm MoS2 field effect
transistors (FETs), we use the ab initio quantum-transport methods to simulate the transport …

Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …

In this paper, we show a validation of our compact model for negative capacitance FET
(NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations …

We demonstrate room-temperature negative capacitance in a ferroelectric–dielectric
superlattice heterostructure. In epitaxially grown superlattice of ferroelectric BSTO (Ba0 …