Characterization of single-event upsets induced by high-LET heavy ions in 16-nm bulk FinFET SRAMs
C Yaqing, H Pengcheng, S Qian, L Bin… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
For advanced technology nodes, the static random access memories (SRAMs) are highly
vulnerable to the single-event upsets (SEUs), especially the multiple cell upsets (MCUs), by …
vulnerable to the single-event upsets (SEUs), especially the multiple cell upsets (MCUs), by …
Study on Single Event Upset and Mitigation Technique in JLTFET-Based 6T SRAM Cell
The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon-based
junctionless tunneling field effect transistor (JLTFET) is explored for the first time. JLTFET …
junctionless tunneling field effect transistor (JLTFET) is explored for the first time. JLTFET …
Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a
bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected …
bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected …
Strategical Survey on Static Random Access Memory: A Bibilometric Study
This paper analyzes bibilometrics of articles on Static Random Access Memory, with read
and write assist techniques during the period from the year 2011 to 2021. Different …
and write assist techniques during the period from the year 2011 to 2021. Different …