A series of Cu-W films with the W content higher than 17.2 at% were prepared by magnetron
sputtering focused co-deposition technology. The micro-structures and nanoidentation …

Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications
covers the basic fundamentals, techniques, applications, and latest developments in the …

Nickel-silicon compounds, as most of the transition metal silicides, show peculiar
thermodynamic and kinetic behaviours. The reason resides in the metastability of a rich …

Nano-multilayered film is usually prepared by the arrangement deposition of different
materials. In this paper, a self-assembled nano-multilayered film was deposited by …

Co-sputtering from confocal sources is a widespread technique for the production of thin film
alloys. In this process the substrate is rotated to ensure that the films are homogeneous in …

Cu–W nano-multilayered films show great potential applications in microelectronic, plasma
and nuclear fields due to the unique interfacial structure. In this paper, Cu–W films with …

In microelectronics, the increase in complexity and the reduction of devices dimensions
make essential the development of new characterization tools and methodologies. Indeed …

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms
after Ni (Pt) silicidation of As-doped polycrystalline Si. These measurements were performed …

Metallic silicides have been used as contact materials on source/drain and gate in metal‐
oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is …

A series of Cu-X (X= W, Mo, Nb, Cr, V, Al) films with similar Cu content (about 50 at.%) were
prepared by dual-target co-deposition technique. By using this method, we found that the …