Methods of forming metal-doped chalcogenide layers and devices containing such doped
chalcogenide layers include using a plasma to induce diffusion of metal into a chalco genide …

300 & nections of said connection network. Additionally, a gate can be located adjacent said
connection gap and which comes into contact with said connection network. The gate can …

A physical neural network is disclosed, which comprises a liquid state machine. The
physical neural network is configured from molecular connections located within a dielectric …

An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …

(57) ABSTRACT A method and apparatus is disclosed for Sensing the resis tance State of a
Programmable Conductor Random Access Memory (PCRAM) element using …

An exemplary embodiment of the present invention includes a method for forming a
programmable cell by forming an opening in a dielectric material to expose a portion of an …

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte
element in response to an applied electric field in one direction only, causing a conductive …

The invention is related to methods and apparatus for providing a resistance variable
memory element with improved data retention and Switching characteristics. According to an …

Physical neural network systems and methods are disclosed. A physical neural network can
be con? gured utilizing molecular technology, wherein said physical neural network …

A resistive random access memory cell is formed on a semiconductor substrate. First and
second diffused regions are disposed in the semiconductor substrate. A polysilicon gate is …