Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging do** technologies enabled by low temperature, non-equilibrium …

Phase separation of indium-bearing III-nitrides is difficult to control and is a major challenge
in the development of these materials. On the other hand, this same process does not occur …

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition
were optimized for minimization of the tunnel junction voltage drop. Two device structures …

Electrically-pumped AlGaN-based edge-emitting laser diodes with a buried tunnel junction
(TJ) for sub-300 nm emission are designed in this paper. Hole injection is one of the major …

We carefully investigate three important effects including postgrowth activation annealing,
delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate …

We present metalorganic chemical vapor deposition-grown III-nitride tunnel junction (TJ)
devices showing negative differential resistance (NDR) under forward bias with a peak to …

We have fabricated tunnel-junction InGaN micro-LEDs using plasma-assisted molecular
beam epitaxy technology, with top-down processing on GaN substrates. Devices have …

Tunnel junctions (TJs) have recently been proposed as a solution for several III-nitride
current problems and to enhance new structures. Reported III-nitride TJs grown by …

This thesis explores two different ideas toward the development of highly efficient III-nitride
optoelectronics. The first part centers on the use of tunnel junctions (TJs) to investigate multi …

A new nanoparticle deposition technique, Aerosol Impaction-Driven Assembly (AIDA), was
extensively characterized for material structures and properties. Aerogel films can be …