A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020‏ - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Domain wall memory: Physics, materials, and devices

D Kumar, T **, R Sbiaa, M Kläui, S Bedanta, S Fukami… - Physics Reports, 2022‏ - Elsevier
Digital data, generated by corporate and individual users, is growing day by day due to a
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …

Spin-torque building blocks

N Locatelli, V Cros, J Grollier - Nature materials, 2014‏ - nature.com
The discovery of the spin-torque effect has made magnetic nanodevices realistic candidates
for active elements of memory devices and applications. Magnetoresistive effects allow the …

Electric-field-assisted switching in magnetic tunnel junctions

WG Wang, M Li, S Hageman, CL Chien - Nature materials, 2012‏ - nature.com
The advent of spin transfer torque effect accommodates site-specific switching of magnetic
nanostructures by current alone without magnetic field. However, the critical current density …

A reversible conversion between a skyrmion and a domain-wall pair in a junction geometry

Y Zhou, M Ezawa - Nature communications, 2014‏ - nature.com
Skyrmions are expected to be a key component of the next-generation of spintronics: known
as 'skyrmionics'. On the other hand, there is a well-established memory device encoded by a …

Tailoring the chirality of magnetic domain walls by interface engineering

G Chen, T Ma, AT N'Diaye, H Kwon, C Won… - Nature …, 2013‏ - nature.com
Contacting ferromagnetic films with normal metals changes how magnetic textures respond
to electric currents, enabling surprisingly fast domain wall motions and spin texture …

Magnetism in ultrathin film structures

CAF Vaz, JAC Bland, G Lauhoff - Reports on Progress in Physics, 2008‏ - iopscience.iop.org
In this paper, we review some of the key concepts in ultrathin film magnetism which underpin
nanomagnetism. We survey the results of recent experimental and theoretical studies of well …

Domain wall mobility, stability and Walker breakdown in magnetic nanowires

A Mougin, M Cormier, JP Adam, PJ Metaxas… - Europhysics …, 2007‏ - iopscience.iop.org
We present an analytical calculation of the velocity of a single 180 domain wall in a
magnetic structure with reduced thickness and/or lateral dimension under the combined …

Magnetoresistive random access memory: The path to competitiveness and scalability

JG Zhu - Proceedings of the IEEE, 2008‏ - ieeexplore.ieee.org
This paper provides an in-depth review of the magnetoresistive random access memory
technology and its developments over the past decade. Both the traditional field-driven and …

The memristive magnetic tunnel junction as a nanoscopic synapse‐neuron system

P Krzysteczko, J Münchenberger… - Advanced …, 2012‏ - Wiley Online Library
Adv. Mater. 2012, 24, 762–766 duration of a each pulse. For vmax, a value in excess of the
activation threshold vth≈ 0.35 V was required (see Supporting Information). The resulting …