Ferroelectric Hafnia: A New Age for FRAM has Started
S Mueller, A Palludo, D Ferrario… - 2024 22nd Non …, 2024 - ieeexplore.ieee.org
FRAM technology development has seen a significant revival over the last decade due to
the discovery of ferroelectricity in hafnia (HfO_2). The field has progressed in various areas …
the discovery of ferroelectricity in hafnia (HfO_2). The field has progressed in various areas …
Exploring the Potential of Hafnium Oxide-Based Ferroelectric Memories for Next-Generation Storage Class Memories
S De - Electron Device Technology and Manufacturing …, 2025 - hal.science
Hafnium oxide (HfO₂)-based ferroelectric memories are emerging as appealing candidates
for storage class memory (SCM) applications due to their scalability, low energy …
for storage class memory (SCM) applications due to their scalability, low energy …