The growing demand for instant and reliable communication means that photonic circuits
are increasingly finding applications in optical communications systems. One of the prime …

One of the major challenges toward Si nanowire (SiNW) based photonic devices is
controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here …

Si quantum dots (QDs) as small as∼ 2 nm in diameter have been synthesized by a variety of
techniques. Because of quantum confinement and the elimination of bulk or surface defects …

This is a short review of the research on the electroluminescence of SiOx (x≤ 2) film based
systems published from January 2001 to February 2003. The goal of these works is the …

We present a detailed analysis and comparison of four models describing the extension of
the electron-energy loss function from the optical limit of q→ 0 into the (q, ω) plane to obtain …

Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si
nanowires (NWs) grown by chemical vapor deposition from TiSi2 catalyst sites. NWs grown …

Research on efficient light emission from silicon devices is moving toward leading-edge
advances in components for nano-optoelectronics and related areas. A silicon laser is being …

We report on the fabrication and performances of highly efficient Si-based light sources. The
devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. They …

We have studied the current transport and electroluminescence properties of metal oxide
semiconductor (MOS) devices in which the oxide layer, which is codoped with silicon …

The mechanism of energy transfer from silicon nanocrystals (nc-Si) to erbium ions (Er 3+) in
SiO 2 films containing nc-Si and Er was studied by analyzing delayed infrared luminescence …