Low‐Power and Field‐Free Perpendicular Magnetic Memory Driven by Topological Insulators
Giant spin–orbit torque (SOT) from topological insulators (TIs) has great potential for low‐
power SOT‐driven magnetic random‐access memory (SOT‐MRAM). In this work, a …
power SOT‐driven magnetic random‐access memory (SOT‐MRAM). In this work, a …
Spin‐Momentum Locking and Ultrafast Spin‐Charge Conversion in Ultrathin Epitaxial Bi1 − xSbx Topological Insulator
E Rongione, L Baringthon, D She… - Advanced …, 2023 - Wiley Online Library
The helicity of three‐dimensional (3D) topological insulator surface states has drawn
significant attention in spintronics owing to spin‐momentum locking where the carriers' spin …
significant attention in spintronics owing to spin‐momentum locking where the carriers' spin …
Spin–Orbit Torques and Spin Hall Magnetoresistance Generated by Twin‐Free and Amorphous Bi0.9Sb0.1 Topological Insulator Films
Topological insulators have attracted great interest as generators of spin–orbit torques
(SOTs) in spintronic devices. Bi1− xSbx is a prominent topological insulator that has a high …
(SOTs) in spintronic devices. Bi1− xSbx is a prominent topological insulator that has a high …
Controlling polarization of spintronic THz emitter by remanent magnetization texture
Terahertz (THz) sciences and technologies have contributed to a rapid development of a
wide range of applications and expanded the frontiers in fundamental science. Spintronic …
wide range of applications and expanded the frontiers in fundamental science. Spintronic …
Topological Surface‐Dominated Spintronic THz Emission in Topologically Nontrivial Bi1−xSbx Films
Topological materials have significant potential for spintronic applications owing to their
superior spin–charge interconversion. Here, the spin‐to‐charge conversion (SCC) …
superior spin–charge interconversion. Here, the spin‐to‐charge conversion (SCC) …
Theory of spin and orbital charge conversion at the surface states of topological insulator
Topological insulators are quantum materials involving time-reversal protected surface
states making them appealing candidates for the design of the next generation of highly …
states making them appealing candidates for the design of the next generation of highly …
[HTML][HTML] Interface-driven spin pum** and inverse Rashba-Edelstein effect in FeGaB/Ag/BiSb multilayers
Spin-orbit-coupling (SOC) plays a critical role in spin-to-charge conversion (SCC)
mechanism. The SCC process is usually investigated by injecting a spin current from …
mechanism. The SCC process is usually investigated by injecting a spin current from …
Competing magnetic correlations and uniaxial anisotropy in ( single crystals
We have succeeded for the first time in synthesizing single crystals of nanolaminated
borides (Fe 1− x Mn x) 2 AlB 2 in the entire Fe–Mn composition range using the Al self-flux …
borides (Fe 1− x Mn x) 2 AlB 2 in the entire Fe–Mn composition range using the Al self-flux …
Fourfold anisotropic magnetic dam** induced by anisotropic spin absorption in amorphous CoFeB/epitaxial IrMn3 bilayers
Y Wang, X Feng, Z Yan, K Xue, X Zhu… - Applied Physics Letters, 2024 - pubs.aip.org
Magnetic dam** rooted in various relaxation processes of spin angular momentum plays
a crucial role in determining the energy consumption and the operating speed of emerging …
a crucial role in determining the energy consumption and the operating speed of emerging …
Antiferromagnetic formation at the interface
Bilayer topological insulator/ferromagnet (TI/FM) heterostructures are promising for
spintronic applications due to their low switching energy and therefore power efficiency …
spintronic applications due to their low switching energy and therefore power efficiency …