With the progress in silicon circuit miniaturization, lowering power consumption becomes the
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …

The remarkable progress of electronics in the 20th century sometimes obscures the dramatic
story of repeated reinvention of the underlying device technology. The reinventions were …

We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO 2 gate
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …

In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted
significant attention from many researchers around the world. The negative capacitance …

Silicon channel ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL)
between ferroelectric and silicon channel suffers from high write voltage, limited write …

P-type two-dimensional steep-slope negative capacitance field-effect transistors are
demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium …

Harnessing ferroelectric negative capacitance in Hf0. 5Zr0. 5O2‐based thin films is
promising for applications in nanoscale electronic devices with ultralow power dissipation …

Negative capacitance field-effect transistor (NCFET) addresses one of the key fundamental
limits in technology scaling, akin to the non-scalable Boltzmann factor, by offering a sub …

In today's highly information-oriented society, a continuously increasing number of
computing devices are needed in the Internet-of-Things (IoT) era, from high-end servers in …

A ferroelectric Hf x Zr 1− x O 2 (HZO) thin film crystallized with nanocrystalline top-and
bottom-ZrO 2 nucleation layers (D-ZrO 2) exhibited superior remanent polarization (2P r= P …