We have studied the Mg do** of cubic GaN grown by plasma-assisted Molecular Beam
Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions …

The quest for renewable energy sources has propelled solar-driven hydrogen production via
water splitting to the forefront of research. Amongst various materials explored for …

Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN)
photocathodes has been observed and measured. The p-doped GaN photocathodes were …

Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal
phase have been extensively studied over the past 30 years and have allowed the …

Gallium nitride (GaN) is a promising material for high-frequency and high-power electronics
owing to its high thermal stability, wide bandgap, and high breakdown voltage …

Cubic zincblende GaN films were grown by metalorganic vapour-phase epitaxy on 3C-
SiC/Si (0 0 1) templates and characterized using Nomarski optical microscopy, atomic force …

The mechanical properties of gallium nitride thin films in the cubic phase (c-GaN) measured
by Berkovich nanoindentation are reported here. The c-GaN thin films were grown on MgO …

Aberration-corrected scanning transmission electron microscopy techniques are used to
study the bonding configuration between gallium cations and nitrogen anions at defects in …

In this paper, we compare pure and doped GaN under spin ferromagnetic and non-magnetic
calculations using the Full Potential Linearized Augmented Plane-wave method and the …

The III-nitride cubic phase are promising materials in photovoltaics and other optoelectronic
devices due to their favorable material properties. This research work presents the growth of …