Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Study of avalanche behavior in 3 kV GaN vertical PN diode under UIS stress for edge-termination optimization
This work investigates both avalanche behavior and failure mechanism of 3 kV GaN-on-GaN
vertical PN diodes, that were fabricated and later tested under unclamped inductive …
vertical PN diodes, that were fabricated and later tested under unclamped inductive …
On uniform avalanche in III-nitrides and its application
The application space for GaN devices is expanding. During our study of Vertical GaN
device technology for power electronics, one of the phenomenal advancements was …
device technology for power electronics, one of the phenomenal advancements was …