The spin degree of freedom of an electron or a nucleus is one of the most basic properties of
nature and functions as an excellent qubit, as it provides a natural two-level system that is …

The research and development of nanotechnology has led to materials science and
engineering entering the “nanomaterial era”. It is pivotal for analyzing the physicochemical …

Substitutional donor atoms in silicon are promising qubits for quantum computation with
extremely long relaxation and dephasing times demonstrated. One of the critical challenges …

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …

Integrated circuits and certain silicon-based quantum devices require the precise positioning
of dopant nanostructures, and hydrogen resist lithography can be used to fabricate such …

Atomically precise, δ-doped structures forming electronic devices in Si have been routinely
fabricated in recent years by using depassivation lithography in a scanning tunneling …

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in
which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a …

We describe an all-optical lithography process that can make electrical contact to nanometer-
precision donor devices fabricated in silicon using scanning tunneling microscopy (STM) …

Controlled atomic scale fabrication based on scanning probe patterning or surface assembly
typically involves a complex process flow, stringent requirements for an ultra-high vacuum …

The key building blocks for the fabrication of devices based on the deterministic placement
of dopants in silicon using scanning tunneling microscopy (STM) hydrogen lithography are …