Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals
by utilizing the impact ionization process. The choice of material is critical for the detection of …

This paper reviews our work on high-speed avalanche photodiodes (APDs) with a unique
vertical-illumination structure, targeting 100-Gb/s systems and beyond. The APDs feature …

Design of avalanche photodiodes (APDs) and their limiting factors on operating speed and
responsivity are discussed with consideration of their application to optical receivers for …

Digital alloy and random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes
(APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a …

This paper describes the design and performance of high-speed avalanche photodiodes
(APDs) for 100-Gbit/s PAM4 operation. The APDs are made with InP-lattice-matched III-V …

We report excess noise factors measured on a series of InP diodes with varying avalanche
region thickness, covering a wide electric field range from 180 to 850 kV/cm. The increased …

Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP)
exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and …

50-Gbit/s error-free operation is demonstrated by a high-speed avalanche photodiode for
the first time. The APD exhibits 3-dB bandwidth of 35 GHz and excellent receiver sensitivity …

We demonstrate InP PICs with avalanche photodiodes (APD) consisting of InP and InAlAs
multiplication regions and investigate these devices regarding their DC and RF linearity …

The electron and hole avalanche multiplication characteristics have been measured in bulk
AlAs 0.56 Sb 0.44 pin and nip homojunction diodes, lattice matched to InP, with nominal …