β-Ga2O3 material properties, growth technologies, and devices: a review

M Higashiwaki - AAPPS Bulletin, 2022‏ - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …

[HTML][HTML] β-Gallium oxide power electronics

AJ Green, J Speck, G ** of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
A Mauze, Y Zhang, T Itoh, E Ahmadi… - Applied Physics …, 2020‏ - pubs.aip.org
Sn do** of (010) β-Ga 2 O 3 grown by conventional plasma-assisted molecular beam
epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied …

Bandgap engineering of Gallium oxides by crystalline disorder

Y Chen, Y Lu, X Yang, S Li, K Li, X Chen, Z Xu… - Materials Today …, 2021‏ - Elsevier
Abstract Gallium oxide (Ga 2 O 3) has recently emerged as a promising candidate for
applications in high-power and radio frequency electronics, deep-ultraviolet optoelectronics …

[HTML][HTML] Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates

AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang… - APL Materials, 2021‏ - pubs.aip.org
Single α-phase (Al x Ga 1− x) 2 O 3 thin films are grown on m-plane sapphire (α-Al 2 O 3)
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …