[HTML][HTML] Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in develo** voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Creation of a thermally assisted skyrmion lattice in Pt/Co/Ta multilayer films
Néel-type magnetic skyrmions in multilayer films have recently attracted significant attention
due to their stability at room temperature and low threshold for current-driven motion …
due to their stability at room temperature and low threshold for current-driven motion …
Compensation of anisotropy in spin hall devices for neuromorphic applications
Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase
noise and improved device properties. Moreover, they could offer key advantages for …
noise and improved device properties. Moreover, they could offer key advantages for …
Electric-field control of interfacial in-plane magnetic anisotropy in CoFeB/MgO junctions
Magnetoelectric coupling in metal/oxide heterostructures has opened up the possibility of
controlling magnetization by voltage, ie, electric field. However, the electric-field excitation of …
controlling magnetization by voltage, ie, electric field. However, the electric-field excitation of …
First-and second-order magnetic anisotropy and dam** of europium iron garnet under high strain
Understanding and tailoring static and dynamic properties of magnetic insulator thin films is
important for spintronic device applications. Here, we grow atomically flat epitaxial europium …
important for spintronic device applications. Here, we grow atomically flat epitaxial europium …
[HTML][HTML] Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures
Spin-transfer magnetic random access memory devices are of significant interest for
cryogenic computing systems where a persistent, fast, low-energy consuming, and …
cryogenic computing systems where a persistent, fast, low-energy consuming, and …
[HTML][HTML] Spin-torque ferromagnetic resonance measurements utilizing spin Hall magnetoresistance in W/Co40Fe40B20/MgO structures
We study the magnetic properties of W/Co 40 Fe 40 B 20 (CoFeB)/MgO films using the spin-
torque ferromagnetic resonance (ST-FMR) technique. This study takes the advantage of the …
torque ferromagnetic resonance (ST-FMR) technique. This study takes the advantage of the …
Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction
The current-induced spin-orbit torque (SOT) is one of the most promising ways for high
speed and low power spintronics devices. However, the mechanism of SOT driven …
speed and low power spintronics devices. However, the mechanism of SOT driven …
Anomalous thermal-assisted spin–orbit torque-induced magnetization switching for energy-efficient logic-in-memory
Spin–orbit torque (SOT) is widely considered as an effective route to manipulate magnetic
order in spintronic devices. The low power consumption and long endurance demands from …
order in spintronic devices. The low power consumption and long endurance demands from …
Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement
We investigate the energy barrier E that determines the thermal stability factor Δ, of
CoFeB/MgO magnetic tunnel junctions (MTJs) with a perpendicular easy axis by retention …
CoFeB/MgO magnetic tunnel junctions (MTJs) with a perpendicular easy axis by retention …