GaAs-based long-wavelength lasers
VM Ustinov, AE Zhukov - Semiconductor science and technology, 2000 - iopscience.iop.org
The present paper reviews recent achievements in the fabrication of diode lasers for the
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with
We report electroreflectance spectra for a series of GaAs 1− x N x samples with x< 0.03. For
all samples, the fundamental band gap transition (E 0) and the transition from the spin-orbit …
all samples, the fundamental band gap transition (E 0) and the transition from the spin-orbit …
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
The mechanism for low-temperature photoluminescence (PL) emissions in GaNAs epilayers
and GaAs/GaN x As 1− x quantum well (QW) structures grown by molecular-beam epitaxy is …
and GaAs/GaN x As 1− x quantum well (QW) structures grown by molecular-beam epitaxy is …
First-principles study of electronic structure and optical properties of heterodiamond
Heterodiamond BC 2 N, as a kind of superhard material expectable, is studied using the ab
initio pseudopotential density functional method. All the calculations are performed after …
initio pseudopotential density functional method. All the calculations are performed after …
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
An intrinsic property of quaternary alloys A 1− y B y C 1− x D x (x≈ 1–3%) with D being an
isovalent trap is reported: a set of discrete band gaps occurs due to substitution of the …
isovalent trap is reported: a set of discrete band gaps occurs due to substitution of the …
Electronic properties of ga (in) nas alloys
A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …
ternary and quaternary alloys is given mainly from an experimental perspective. The …
The anomalous bandgap bowing in GaAsN
U Tisch, E Finkman, J Salzman - Applied physics letters, 2002 - pubs.aip.org
The composition dependence of the fundamental bandgap of thin, pseudomorphic
GaAs1xNx layers (0x 5%) on GaAs substrates is studied by optical transmission …
GaAs1xNx layers (0x 5%) on GaAs substrates is studied by optical transmission …
The study of nanocrystalline cerium oxide by X-ray absorption spectroscopy
P Nachimuthu, WC Shih, RS Liu, LY Jang… - Journal of Solid State …, 2000 - Elsevier
X-ray absorption spectroscopy has been used to study the structural and electronic
properties of cerium atoms in nano-crystalline cerium oxide. These nanocrystalline cerium …
properties of cerium atoms in nano-crystalline cerium oxide. These nanocrystalline cerium …
Nitrogen-related electron traps in Ga(As,N) layers
Capacitance spectroscopy is used to examine the compositional dependence of deep levels
in Si-doped Ga (As, N) layers grown on GaAs. We find two predominant electron traps at …
in Si-doped Ga (As, N) layers grown on GaAs. We find two predominant electron traps at …
Raman studies of nitrogen incorporation in
T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu… - Applied physics …, 1998 - pubs.aip.org
We report direct-backscattering Raman studies of GaAs 1− x N x alloys, for x⩽ 0.03, grown
on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like …
on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like …