Ion implantation do** in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode
with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra …
with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra …
Effects of the sequential implantation of Mg and N ions into GaN for p-type do**
H Sakurai, T Narita, K Kataoka, K Hirukawa… - Applied Physics …, 2021 - iopscience.iop.org
The sequential implantation of Mg and N ions into GaN was investigated using conventional
rapid thermal annealing and ultra-high-pressure annealing (UHPA). In …
rapid thermal annealing and ultra-high-pressure annealing (UHPA). In …
Analysis of vertical GaN JBS and pn diodes by Mg ion implantation and ultrahigh-pressure annealing
We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion
implantation and ultrahigh-pressure annealing (UHPA). The static ON-state characteristics of …
implantation and ultrahigh-pressure annealing (UHPA). The static ON-state characteristics of …
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that
have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating …
have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating …
Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing
The diffusion behavior of Mg in Mg/N co-implanted GaN is investigated in response to a set
of annealing conditions and methodologies, namely, 1000 C/30 min thermal anneal, by high …
of annealing conditions and methodologies, namely, 1000 C/30 min thermal anneal, by high …
[HTML][HTML] P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing
Co-implantation of Mg with N has been shown to improve p-type conductivity in Mg-
implanted GaN. Achievement of p-type material still requires temperatures beyond the …
implanted GaN. Achievement of p-type material still requires temperatures beyond the …
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
We present a comprehensive performance analysis of vertical GaN JFETs via TCAD
simulation with unique considerations for gates formed by Mg ion implantation into GaN. The …
simulation with unique considerations for gates formed by Mg ion implantation into GaN. The …
Novel Codo** Moiety to Achieve Enhanced P‐Type Do** in GaN by Ion Implantation
Codo** of gallium nitride for improved acceptor ionization has long been theorized;
however, reduction to practice proves difficult via growth. Herein, implementation of …
however, reduction to practice proves difficult via growth. Herein, implementation of …
Strain map** of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography
Strain and tilt maps of gallium nitride (GaN) materials including substrates, ion-implanted
and annealed epilayers, and etched and regrown epilayers by different etching methods …
and annealed epilayers, and etched and regrown epilayers by different etching methods …